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| Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (Ta=25C) Ratings 1500 1500 600 5 25 15 7.5 60 3.0 150 -55 to +150 Unit V V V V A A A W C C 5 23.4 22.00.5 2.0 1.2 5 18.60.5 5 5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 4.0 2.00.2 1.10.1 2.0 0.70.1 5.450.3 3.30.3 0.70.1 5.450.3 5.50.3 5 1 2 3 2.0 1:Base 2:Collector 3:Emitter TOP-3E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time (TC=25C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 7.5A IC = 7.5A, IB = 1.88A IC = 7.5A, IB = 1.88A VCE = 10V, IC = 0.1A, f = 0.5MHz IC = 7.5A, IB1 = 1.88A, IB2 = -3.76A 3 2.7 0.2 5 min typ max 50 1 50 12 3 1.5 V V MHz s s Unit A mA A 1 Power Transistors PC -- Ta Collector power dissipation PC (W) 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 (2) (3) (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink 2SC5440 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 5000 25C TC=100C IC/IB=4 -25C 100 VCE=5V hFE -- IC 100 4000 Forward current transfer ratio hFE TC=100C 3000 25C 10 -25C 2000 1000 0 0.1 1 10 100 1 0.001 0.01 0.1 1 10 100 Ambient temperature Ta (C) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 ICP 10 IC 10ms t=100s Area of safe operation, horizontal operation ASO 35 f=64kHz, TC<90C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. 30 Collector current IC (A) Collector current IC (A) VCEO max. 1ms 25 1 DC 20 0.1 15 10 0.01 Non repetitive pulse TC=25C 1 3 10 30 100 5 <1mA 0 500 1000 1500 2000 0.001 0 300 1000 Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) 2 |
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